inchange semiconductor isc product specification isc silicon npn darlington power transistor 2sD1410 description collector-emitter sustaining voltage- : v ceo(sus) = 250v(min) collector-emitter saturation voltage- :v ce(sat) = 2.0v(max) @i c = 4a high dc current gain : h fe = 2000(min) @ i c = 2a, v ce = 2v applications igniter applications high voltage switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 300 v v ceo collector-emitter voltage 250 v v ebo emitter-base voltage 5 v i c collector current-continuous 6 a i b b base current-continuous 1 a collector power dissipation @ t a =25 2.0 p c collector power dissipation @ t c =25 30 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn free datasheet http://www.datasheet-pdf.com/
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2sD1410 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.5a ; l= 40mh 250 v v ce( sat ) collector-emitter saturation voltage i c = 4a; i b = 40ma b 2.0 v v be( sat ) base-emitter saturation voltage i c = 4a; i b = 40ma b 2.5 v i cbo collector cutoff current v cb = 300v; i e = 0 500 a i ebo emitter cutoff current v eb = 5v; i c =0 500 a h fe -1 dc current gain i c = 2a ; v ce = 2v 2000 h fe -2 dc current gain i c = 4a ; v ce = 2v 200 c ob output capacitance i e = 0 ; v cb = 10v; f test =1mhz 35 pf switching times t on turn-on time 1.0 s t stg storage time 8.0 s t f fall time i c = 4a , i b1 = -i b2 = 40ma r l = 25 ; v cc = 100v 5.0 s isc website www.iscsemi.cn 2 free datasheet http://www.datasheet-pdf.com/
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2sD1410 isc website www.iscsemi.cn free datasheet http://www.datasheet-pdf.com/
|
